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1

Significant On-Resistance Reduction of LDMOS Devices by Intermitted Trench Gates Integration

Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1018 KB

english, 2012

2

Reduced On Resistance in LDMOS Devices by Integrating Trench Gates Into Planar Technology

Erlbacher, Tobias, Bauer, Anton J, Frey, Lothar

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 399 KB

english, 2010

3

Optimized Design for 4H-SiC Power DMOSFET

Di Benedetto, Luigi, Licciardo, Gian-Domenico, Erlbacher, Tobias, Bauer, Anton J., Rubino, Alfredo

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 491 KB

english, 2016

4

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

Schoeck, Johannes, Buettner, Jonas, Rommel, Mathias, Erlbacher, Tobias, Bauer, Anton J.

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 485 KB

english, 2017

5

The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

Shen, Lingyan, Müller, Stephan, Cheng, Xinhong, Zhang, Dongliang, Zheng, Li, Xu, Dawei, Yu, Yuehui, Meissner, Elke, Erlbacher, Tobias

Journal:

Superlattices and Microstructures

Year:

2017

Language:

english

File:

PDF, 1.33 MB

english, 2017

6

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

Weisse, Julietta, Hauck, Martin, Sledziewski, Tomasz, Krieger, Michael, Bauer, Anton, Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 304 KB

english, 2019

7

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

Rusch, Oleg, Hellinger, Carsten, Moult, Jonathan, Corcoran, Yunji, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.04 MB

2020

8

Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC

Lim, Min Who, Sledziewski, Tomasz, Rommel, Mathias, Erlbacher, Tobias, Kim, Hong Ki, Kim, Seong Jun, Shin, Hoon Kyu, Bauer, Anton J.

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1005 KB

2020

9

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Hürner, Andreas, di Benedetto, Luigi, Erlbacher, Tobias, Mitlehner, Heinz, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 2.63 MB

english, 2015

10

Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation

Burenkov, Alex, Matthus, Christian, Erlbacher, Tobias

Journal:

IEEE Sensors Journal

Year:

2016

Language:

english

File:

PDF, 3.73 MB

english, 2016

11

Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes

Di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Bellone, Salvatore

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 2.91 MB

english, 2016

12

Optimization of 4H-SiC Photodiodes as Selective UV Sensors

Matthus, C.D., Burenkov, A., Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 661 KB

english, 2017

13

Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications

Krach, Florian, Schwarzmann, Holger, Bauer, Anton J., Erlbacher, Tobias, Frey, Lothar

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

14

Novel Advanced Analytical Design Tool for 4H-SiC VDMOSFET Devices

di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Rubino, Alfredo

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 627 KB

english, 2017

15

Wavelength-selective 4H-SiC UV-sensor array

Matthus, Christian D., Bauer, Anton J., Frey, Lothar, Erlbacher, Tobias

Journal:

Materials Science in Semiconductor Processing

Year:

2019

Language:

english

File:

PDF, 1.01 MB

english, 2019

16

First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC: A Proof of Concept

di Benedetto, Luigi, Licciardo, Gian Domenico, Huerner, Andreas, Erlbacher, Tobias, Bauer, Anton, Rubino, Alfredo

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 656 KB

english, 2019

17

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits

Weisse, Julietta, Mitlehner, Heinz, Frey, Lothar, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 272 KB

english, 2019

18

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes

Rusch, Oleg, Moult, Jonathan, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 1.41 MB

english, 2019

19

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors

Schlichting, Holger, Sledziewski, Tomasz, Bauer, Anton, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 3.25 MB

2019

20

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements

Kocher, Matthias, Yao, B.T., Weisse, Julietta, Rommel, Mathias, Xu, Zong Wei, Erlbacher, Tobias, Bauer, Anton

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 838 KB

2019

21

Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations

Kim, Hong Ki, Kim, Seong Jun, Buettner, Jonas, Lim, Min Who, Erlbacher, Tobias, Bauer, Anton, Koo, Sang Mo, Lee, Nam Suk, Shin, Hoon Kyu

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 2.56 MB

2019

22

Channeling in 4H-SiC from an Application Point of View

Pichler, Peter, Sledziewski, Tomasz, Häublein, Volker, Bauer, Anton, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 783 KB

2019

23

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET

Sledziewski, Tomasz, Erlbacher, Tobias, Bauer, Anton, Frey, Lothar, Chen, Xi Ming, Zhao, Yan Li, Li, Cheng Zhan, Dai, Xiao Ping

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.09 MB

2019

24

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation

Kocher, Matthias, Erlbacher, Tobias, Rommel, Mathias, Bauer, Anton

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 2.54 MB

2019

25

Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures

di Benedetto, Luigi, Matthus, C.D., Erlbacher, Tobias, Bauer, Anton, Licciardo, Gian Domenico, Rubino, Alfredo, Frey, Lothar

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 436 KB

2019

26

SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation Study

Sledziewski, Tomasz, Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.45 MB

2020

27

Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications

Albrecht, Matthaeus, PÃ©rez, David, Martens, R. Christian, Bauer, Anton J., Erlbacher, Tobias

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 630 KB

2020

28

Ohmic and rectifying contacts on bulk AlN for radiation detector applications

Tobias Erlbacher, Matthias Bickermann, Birgit Kallinger, Elke Meissner, Anton J. Bauer, Lothar Frey

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 394 KB

english, 2012

29

[IEEE 2012 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM 2012) - Sorrento, Italy (2012.06.20-2012.06.22)] International Symposium on Power Electronics Power Electronics, Electrical Drives, Automation and Motion - A generic approach for comparing input filter efforts of voltage- and current source converters

Schramm, Andreas, Lanfer, Hermann, Petzoldt, Jurgen, Radel, Uwe, Schwarzmann, Holger, Erlbacher, Tobias

Year:

2012

Language:

english

File:

PDF, 1.82 MB

english, 2012

30

[Power Systems] Lateral Power Transistors in Integrated Circuits ||

Erlbacher, Tobias

Year:

2014

Language:

english

File:

PDF, 7.55 MB

english, 2014

31

A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers

Murakami, Katsuhisa, Rommel, Mathias, Yanev, Vasil, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.45 MB

english, 2011

32

Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors

Erlbacher, Tobias, Schwarzmann, Holger, Bauer, Anton J., Döhler, Gottfried H., Schreivogel, Martin, Lutz, Theresa, Guillén, Francesco H., Graf, Jürgen, Fix, Richard, Frey, Lothar

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 977 KB

english, 2015

33

Self-Aligned Growth of Organometallic Layers for Nonvolatile Memories: Comparison of Liquid-Phase and Vapor-Phase Deposition

Erlbacher, Tobias, Jank, Michael P. M., Ryssel, Heiner, Frey, Lothar, Engl, Reimund, Walter, Andreas, Sezi, Recai, Dehm, Christine

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 346 KB

english, 2008

34

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

Strenger, Christian, Häublein, Volker, Erlbacher, Tobias, Bauer, Anton J., Ryssel, Heiner, Beltran, Ana Maria, Schamm-Chardon, Sylvie, Mortet, Vincent, Bedel-Pereira, Eléna, Lefebvre, Mathieu, Cristia

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 942 KB

english, 2012

35

Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs

Strenger, Christian, Uhnevionak, Viktoryia, Mortet, Vincent, Ortiz, Guillermo, Erlbacher, Tobias, Burenkov, Alexander, Bauer, A.J., Cristiano, Fuccio, Bedel-Pereira, Eléna, Pichler, Peter, Ryssel, Hei

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 694 KB

english, 2014

36

[Power Systems] Lateral Power Transistors in Integrated Circuits || Summary of Integration Concepts for LDMOS Transistors

Erlbacher, Tobias

Year:

2014

Language:

english

File:

PDF, 311 KB

english, 2014

37

[Power Systems] Lateral Power Transistors in Integrated Circuits || Demand for Power Electronic Systems and Radio-Frequency Applications

Erlbacher, Tobias

Year:

2014

Language:

english

File:

PDF, 564 KB

english, 2014

38

ECS Transactions [ECS 217th ECS Meeting - Vancouver, Canada (April 25 - April 30, 2010)] - (Invited) Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers

Rommel, Mathias, Yanev, Vasil, Paskaleva, Albena, Erlbacher, Tobias, Lemberger, Martin, Bauer, Anton J., Frey, Lothar

Year:

2010

Language:

english

File:

PDF, 1.23 MB

english, 2010

39

Temperature Dependent Characterization of Bipolar Injection Field-Effect-Transistors (BiFET) for Determining the Short-Circuit-Capability

Hürner, Andreas, Erlbacher, Tobias, Mitlehner, Heinz, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

40

Monolithic 3D TSV-based high-voltage, high-temperature capacitors

Gruenler, Saeideh, Rattmann, Gudrun, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

Microelectronic Engineering

Year:

2016

Language:

english

File:

PDF, 2.00 MB

english, 2016

41

[IEEE 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Saratoga Springs, NY, USA (2015.5.3-2015.5.6)] 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) - Modelling of the electrochemical etch stop with high reverse bias across pn-junctions

Szwarc, Robert, Frey, Lothar, Weber, Hans, Moder, Iris, Erlbacher, Tobias, Rommel, Mathias, Bauer, Anton J.

Year:

2015

Language:

english

File:

PDF, 575 KB

english, 2015

42

[IEEE 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) - Grenoble, France (2015.5.18-2015.5.21)] 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) - High-voltage monolithic 3D capacitors based on through-silicon-via technology

Gruenler, Saeideh, Rattmann, Gudrun, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Year:

2015

File:

PDF, 319 KB

2015

43

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)

Hürner, Andreas, Mitlehner, Heinz, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 2.16 MB

english, 2016

44

A Model of Electric Field Distribution in Gate Oxide and JFET-Region of 4H-SiC DMOSFETs

Di Benedetto, Luigi, Licciardo, Gian Domenico, Erlbacher, Tobias, Bauer, Anton J., Liguori, Rosalba, Rubino, Alfredo

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.58 MB

english, 2016

45

Ion Implanted 4H-SiC UV Pin-Diodes for Solar Radiation Detection – Simulation and Characterization

Matthus, C.D., Erlbacher, Tobias, Burenkov, Alexander, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 317 KB

english, 2016

46

High-K: Latest Developments and Perspectives

Bauer, Anton J., Lemberger, Martin, Erlbacher, Tobias, Weinreich, Wenke

Journal:

Materials Science Forum

Year:

2008

Language:

english

File:

PDF, 1.99 MB

english, 2008

47

Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs

Albrecht, Matthaeus, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 322 KB

english, 2016

48

Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET

Albrecht, Matthaeus, Huerner, Andreas, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 1.95 MB

english, 2017

49

Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications

Huerner, Andreas, Erlbacher, Tobias, Bauer, Anton J., Frey, Lothar

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 2.74 MB

english, 2017

50

Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C

Matthus, Christian David, Erlbacher, Tobias, Hess, Andreas, Bauer, Anton J., Frey, Lothar

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 964 KB

english, 2017

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